View details260 kinds of molecule and application(encyclopedia)
1. Nitrogen, formula: N₂, purity > 99.999%, Application: Used as standard gas, online instrument
standard gas, calibration gas, zero - point gas, balance gas. It is applied in epitaxy, diffusion,
chemical vapor deposition, ion implantation, plasma dry etching, photolithography, annealing,
lap jointing, sintering and other processes during the preparation of semiconductor devices. It
is also used in industries such as electrical appliances, food packaging, and chemistry.
2. Oxygen, formula: O₂, purity > 99.995%, Application: Used as standard gas, online instrument
standard gas, calibration gas, zero - point gas. It is used as medical gas. In the preparation
process of semiconductor devices, it is applied in thermal oxidation, diffusion, chemical vapor
deposition, plasma dry etching and other processes. It is also used in the production of optical
fibers.
3. Argon, formula: Ar, purity > 99.999, Application: Used as standard gas, zero - point gas, balance
gas. It is used in processes like crystal growth, thermal oxidation, epitaxy, diffusion, nitridation,
sputtering, plasma dry etching, carrier flow, annealing, lap jointing, sintering in the preparation
of semiconductor devices. It is also used in special and industrial gas mixtures.
4. Hydrogen, formula: H₂, purity > 99.999%, Application: Used as standard gas, zero - point gas,
balance gas, calibration gas, online instrument standard gas. In the preparation of semiconductor
devices, it is applied in crystal growth, thermal oxidation, epitaxy, diffusion, polysilicon
production, tungstenization, ion implantation, carrier flow, sintering and other processes. It is
also used in industries such as chemistry and metallurgy.
5. Helium, formula: He, purity > 99.999%, Application: Used as standard gas, zero - point gas,
balance gas, calibration gas, medical gas. It is used in processes like crystal growth, plasma dry
etching, carrier flow in the preparation of semiconductor devices. It is also commonly used in
special and industrial gas mixtures.
6. Chlorine, formula: Cl₂, purity > 99.96%, Application: Used as standard gas, calibration gas. It is
used in processes such as crystal growth, plasma dry etching, thermal oxidation in the
preparation of semiconductor devices. It is also used in water purification, bleaching of pulp
and textiles, sanitation treatment of industrial waste, sewage, and swimming pools, and in the
preparation of many chemical products.
7. Fluorine, formula: F₂, purity > 98%, Application: Used in plasma dry etching during the
preparation of semiconductor devices. It is also used in the preparation of uranium hexafluoride,
sulfur hexafluoride, boron trifluoride, and metal fluorides.
8. Ammonia, formula: NH₃, purity > 99.995%, Application: Used as standard gas, calibration gas,
online instrument standard gas. It is used in the nitridation process of semiconductor device
preparation. It is also used in industries such as refrigeration, fertilizers, petroleum, mining, and
rubber.
9. Hydrogen Chloride, formula: HCl, purity > 99.995%, Application: Used as standard gas. It is
used in processes such as epitaxy, thermal oxidation, diffusion in the preparation of
semiconductor devices. It is also used as a chemical intermediate in the hydrochlorination
reaction of rubber and in the oxychlorination process when producing vinyl and alkyl chlorides.
10. Nitric Oxide, formula: NO, purity > 99%, Application: Used as standard gas, calibration gas. It
is used in the chemical vapor deposition process of semiconductor device preparation. It is also
used in the preparation of standard gas mixtures for monitoring air pollution.
11. Carbon Dioxide, formula: CO₂, purity > 99.99%, Application: Used as standard gas, online
instrument standard gas, calibration gas. It is used in oxidation and carrier - flow processes
during the preparation of semiconductor devices. It is also used in special gas mixtures, power
generation, gas displacement treatment, as a diluent for sterilizing gases, fire extinguishers, food
freezing, metal cold treatment, beverage carbonation, aerosol propellants, and food storage
protection gas.
12. Nitrous Oxide, formula: N₂O, purity > 99.999%, Application: Used as standard gas, medical
gas. It is used in the chemical vapor deposition process of semiconductor device preparation, as
a medical anesthetic, aerosol propellant, and for vacuum and pressure leak detection. It is also
used in infrared spectrometers.
13. Hydrogen Sulfide, formula: H₂S, purity > 99.999%, Application: Used as standard gas,
calibration gas. It is used in plasma dry etching during the preparation of semiconductor devices.
In the chemical industry, it is used to prepare sulfides such as sodium sulfide and organic
sulfides. It is used as a solvent and for quantitative analysis in laboratories.
14. Carbon Tetrachloride, formula: CCl₄, purity > 99.99%, Application: Used as standard gas. It is
used in processes such as epitaxy and chemical vapor deposition in the preparation of
semiconductor devices. It is also used as a solvent, organic chlorinating agent, spice leaching
agent, fiber degreaser, fire extinguisher, analytical reagent, and in the preparation of chloroform
and pharmaceuticals.
15. Hydrogen Cyanide, formula: HCN, purity > 99.9%, Application: Used in the plasma dry etching
process of semiconductor device preparation. It is used to prepare hydrocyanic acid solutions,
metal cyanides, cyanogen chlorides, and as a synthetic intermediate for preparing acrylonitrile
and its derivatives.
16. Carbonyl Fluoride, formula: COF₂, purity > 99.99%, Application: Used in the plasma dry
etching process of semiconductor device preparation. It is also used as a fluorinating agent.
17. Carbonyl Sulfide, formula: COS, purity > 99.99%, Application: Used as calibration gas. It is
used in the ion implantation process of semiconductor device preparation. It is also used in the
synthesis of some carboxyl groups, thiocarboxylic acids, thiocarbonates, and thiazoles.
18. Hydrogen Iodide, formula: HI, purity > 99.95%, Application: Used in the ion implantation
process of semiconductor device preparation. It is also used in the preparation of hydroiodic
acid solutions.
19. Hydrogen Bromide, formula: HBr, purity > 99.9%, Application: Used in the plasma dry etching
process of semiconductor device preparation. It is used as a reducing agent and in the
preparation of organic and inorganic bromine compounds.
20. Silane, formula: SiH₄, purity > 99.999%, resistivity > 100Ω/cm², Application: Used in processes
such as epitaxy and chemical vapor deposition in the preparation of semiconductor devices.
21. Disilane, formula: Si₂H₆, purity > 99.9%, Application: Used in the chemical vapor deposition
process of semiconductor device preparation.
22. Phosphine, formula: PH₃, purity > 99.999%, Application: Used in processes such as epitaxy,
diffusion, chemical vapor deposition, ion implantation in the preparation of semiconductor
devices. A low - concentration gas mixture of phosphine and carbon dioxide can be used to kill
insect eggs in granaries and prepare fire - resistant compounds.
23. Arsine, formula: AsH₃, purity > 99.999%, Application: Used in processes such as epitaxy,
diffusion, chemical vapor deposition, ion implantation in the preparation of semiconductor
devices.
24. Diborane, formula: B₂H₆, purity > 99.995%, Application: Used in processes such as epitaxy,
diffusion, oxidation in the preparation of semiconductor devices. It is also used in some
chemical industry synthesis processes, such as hydroboration reactions (to produce alcohols),
organic function degradation, and in the preparation of higher - order borane derivatives and
carborane compounds.
25. Germane, formula: GeH₄, purity > 99.999%, Application: Used in processes such as epitaxy
and ion implantation in the preparation of semiconductor devices.
26. Stibine, formula: SbH₃, purity > 99.999%, Application: Used in processes such as epitaxy and
ion implantation in the preparation of semiconductor devices.
27. Tetraethoxysilane, formula: Si(OC₂H₅)₄, purity > 99.99%, Application: Used in the chemical
vapor deposition process of semiconductor device preparation.
28. Ethane, formula: C₂H₆, purity > 99.99%, Application: Used as standard gas, calibration gas,
online instrument standard gas. It is used in the plasma dry etching process of semiconductor
device preparation. It is also used in the heat treatment of the metallurgical industry and in the
chemical industry to prepare ethanol, ethylene glycol oxide, vinyl chloride, higher alcohols,
acetaldehyde, etc.
29. Propane, formula: C₃H₈, purity > 99.99%, Application: Used as standard gas, calibration gas,
online instrument standard gas. It is used in the plasma dry etching process of semiconductor
device preparation. It is also used as fuel, refrigerant, and as a raw material for preparing
ethylene and propylene.
30. Hydrogen Selenide, formula: H₂Se, purity > 99.999%, Application: Used in processes such as
diffusion and ion implantation in the preparation of semiconductor devices.
31. Hydrogen Telluride, formula: H₂Te, purity > 99.999%, Application: Used in processes such as
diffusion and ion implantation in the preparation of semiconductor devices.
32. Dichlorosilane, formula: SiH₂Cl₂, purity > 99.999%, Application: Used in processes such as
epitaxy and chemical vapor deposition in the preparation of semiconductor devices.
33. Trichlorosilane, formula: SiHCl₃, purity > 99.999%, Application: Used in processes such as
epitaxy and chemical vapor deposition in the preparation of semiconductor devices.
34. Dimethyl Telluride, formula: (CH₃)₂Te, purity > 99.999%, Application: Used in processes such
as diffusion and ion implantation in the preparation of semiconductor devices.
35. Diethyl Telluride, formula: (C₂H₅)₂Te, purity > 99.999%, Application: The usage is the same as
that of (34).
36. Dimethyl Zinc, formula: (CH₃)₂Zn, purity > 99.999%, Application: Used in the chemical vapor
deposition process of semiconductor device preparation.
37. Diethyl Zinc, formula: (C₂H₅)₂Zn, purity > 99.999%, Application: The usage is the same as that
of (36).
38. Phosphorus Trichloride, formula: PCl₃, purity > 99.99%, Application: Used in processes such
as diffusion, germanium epitaxial growth, and ion implantation in the preparation of
semiconductor devices. It is a good chlorinating agent for organic compounds and is also used
in the synthesis of phosphorus - containing organic compounds.
39. Arsenic Trichloride, formula: AsCl₃, purity > 99.99%, Application: Used in the epitaxy and ion
implantation processes of semiconductor device preparation.
40. Boron Trichloride, formula: BCl₃, purity > 99.99%, Application: Used in plasma dry etching
and diffusion. It serves as a boron carrier gas and a catalyst for some organic reactions. When
refining magnesium, zinc, aluminum, and copper alloys, it is used to remove nitrogen, carbon,
and oxygen compounds from molten metals.
41. Silicon Tetrachloride, formula: SiCl₄, purity > 99.999%, Application: Used in processes such
as epitaxy and chemical vapor deposition in the preparation of semiconductor devices.
42. Tin Tetrachloride, formula: SnCl₄, purity > 99.99%, Application: Used in epitaxy and ion
implantation.
43. Germanium Tetrachloride, formula: GeCl₄, purity > 99.999%, Application: Used in ion
implantation.
44. Titanium Tetrachloride, formula: TiCl₄, purity > 99.99%, Application: Used in plasma dry
etching.
45. Phosphorus Pentachloride, formula: PCl₅, purity > 99.99%, Application: Used in epitaxy and
ion implantation.
46. Antimony Pentachloride, formula: SbCl₅, purity > 99.99%, Application: Used in epitaxy and
ion implantation.
47. Molybdenum Hexachloride, formula: MoCl₆, purity > 99.9%, Application: Used in chemical
vapor deposition.
48. Boron Tribromide, formula: BBr₃, purity > 99.99%, Application: Used in the ion implantation
process of semiconductor device preparation and in the production of optical fibers.
49. Phosphorus Tribromide, formula: PBr₃, purity > 99.99%, Application: Used in epitaxy and ion
implantation.
50. Phosphoryl Chloride, formula: POCl₃, purity > 99.999%, Application: Used in the diffusion
process.
51. Boron Trifluoride, formula: BF₃, purity > 99.99%, Application: Used in ion implantation. It can
also serve as a carrier gas and a catalyst for some organic reactions. When refining magnesium,
zinc, aluminum, and copper alloys, it is used to remove nitrogen, oxygen, and carbide
compounds from molten metals.
52. Phosphorus Trifluoride, formula: PF₃, purity > 99%, Application: Used in the epitaxy and ion
implantation processes. It is also used as a fluorinating agent.
53. Arsenic Trifluoride, formula: AsF₃, purity > 99.9%, Application: The usage is the same as that
of (52).
54. Xenon Difluoride, formula: XeF₂, purity > 99.9%, Application: Used in the epitaxy and ion
implantation processes. It is used for the inspection of fixed - mold xenon and the determination
of xenon in the exhaust gas of atomic reactors.
55. Trifluorochloromethane, formula: CClF₃ (R - 13), purity > 99.995%, Application: Used in the
plasma dry etching process. It can also be used as a refrigerant and in air - conditioning.
56. Trifluoromethane, formula: CHF₃ (R - 23), purity > 99.999%, Application: Used in the plasma
dry etching process. It is also used as a cryogenic refrigerant.
57. Nitrogen Trifluoride, formula: NF₃, purity > 99.99%, Application: Used in the plasma dry
etching process. It is also used as a rocket propellant and a fluorinating agent.
58. Trifluorobromomethane, formula: CBrF₃ (R13B1), purity > 99.99%, Application: Used in the
plasma dry etching process. It is also used in air - conditioning, cryogenic refrigeration, and as
a fire extinguisher.
59. Boron - 11 Trifluoride, formula: ¹¹B¹¹F₃, purity > 99.99%, Application: Used in the ion
implantation process (Natural boron isotope contains 81% of ¹¹B and 19% of ¹⁰B. The sold ¹¹B
is enriched with 96% isotope BF₃). It is also used in the production of optical fibers.
60. Carbon Tetrafluoride, formula: CF₄ (R - 14), purity > 99.99%, Application: Used in the plasma
dry etching process. It is used as a cryogenic fluid at very low temperatures and also as a neutral
and inert gas.
61. Sulfur Tetrafluoride, formula: SF₄, purity > 98%, Application: Used in the plasma dry etching
process. It is also used as a fluorinating agent and a surface treatment agent.
62. Silicon Tetrafluoride, formula: SiF₄, purity > 99.99%, Application: Used in the chemical vapor
deposition process. It is used to prepare fluosilicic acid and its salts.
63. Germanium Tetrafluoride, formula: GeF₄, purity > 99.999%, Application: Used in ion
implantation.
64. Phosphorus Pentafluoride, formula: PF₅, purity > 99.9%, Application: Used in ion implantation
and plasma dry etching processes. It is used as a fluorinating agent and serves as a catalyst in
polymerization, alkylation, dealkylation, and hydrocarbon cracking reactions.
65. Chloropentafluoroethane, formula: C₂ClF₆ (R - 115), purity > 99.99%, Application: Used in the
plasma dry etching process. It is used as a refrigerant and an aerosol propellant.
66. Arsenic Pentafluoride, formula: AsF₅, purity > 99%, Application: Used in the epitaxy and ion
implantation processes. It is used as a fluorinating agent.
67. Hexafluoroethane, formula: C₂F₆ (R - 116), purity > 99.99%, Application: Used in the plasma
dry etching process. It is used as a cooling, refrigerating agent, and in air - conditioning. It is a
raw material for monomer production, a fluorine - adding agent in chemical reactions, and an
insulating agent for electrical equipment.
68. Sulfur Hexafluoride, formula: SF₆, purity > 99.99%, Application: Used as a standard gas. It is
used in the chemical vapor deposition process. Due to its high resistance under high voltage, it
is used as an insulating agent for electrical equipment. It is also used as a leak - detection gas
and as a carrier gas for chromatographs in laboratories.
69. Tungsten Hexafluoride, formula: WF₆, purity > 99.99%, Application: Used in the chemical
vapor deposition process. It is a strong fluorinating agent and is also used as a tungsten carrier.
70. Hexafluorooxygene (the name might be incorrect, it should be checked in the original context),
formula: (CF₃)₂O₂, purity > 99.99%, Application: Used in the plasma dry etching process.
71. Hexafluoroacetone, formula: (CF₃)₂CO, purity > 99.99%, Application: The usage is the same
as that of (70).
72. Hexafluoroacetyl Oxide, formula: (CF₃CO)₂O, purity > 99.99%, Application: The usage is the
same as that of (70).
73. Rhenium Hexafluoride, formula: ReF₆, purity > 97%, Application: Used in the ion implantation
process. It is used as a fluorinating agent.
74. Octafluoropropane, formula: C₃F₈ (R - 218), purity > 99.9%, Application: Used in the plasma
dry etching process. It is mixed with Freon as a refrigerant and is used as an insulating agent for
high - voltage electricity.
75. Octafluorocyclobutane, formula: C₄F₈ (RC318), purity > 99.99%, Application: Used in the
plasma dry etching process. It is used as a cooling and refrigerating agent and as a gas insulator
for electrical and electronic equipment.
76. Dodecafluoropentane, formula: C₅F₁₂, purity > 99.9%, Application: Used in the plasma dry
etching process. It can also be mixed with CF₄.
77. Trimethylaluminum, formula: (CH₃)₃Al, purity > 99.999%, Application: Used in the chemical
vapor deposition process. It is used in the organic synthesis of metals.
78. Trimethylgallium, formula: (CH₃)₃Ga, purity > 99.999%, Application: The usage is the same as
that of (77).
79. Trimethylantimony, formula: (CH₃)₃Sb, purity > 99.999%, Application: The usage is the same
as that of (77).
80. Trimethylindium, formula: (CH₃)₃In, purity > 99.999%, Application: The usage is the same as
that of (77).
81. Triethylaluminum, formula: (C₂H₅)₃Al, purity > 99.999%, Application: The usage is the same
as that of (77).
82. Triethylgallium, formula: (C₂H₅)₃Ga, purity > 99.999%, Application: The usage is the same as
that of (77).
83. Tetraethyllead, formula: (C₂H₅)₄Pb, purity > 99.999%, Application: Used in the chemical vapor
deposition process.
84. Acrylonitrile, formula: C₃H₃N, purity > 99.9%, Application: Used in the plasma dry etching
process.
85. 1,1,2 - Trichloroethylene, formula: C₂HCl₃, purity > 99.99%, Application: Used as standard gas,
calibration gas, medical gas. It is used in the thermal oxidation process of semiconductor device
preparation. It is used as a metal degreaser and an extractant for fats, oils, paraffins, etc. It is
also used in clothes dry - cleaning, as a refrigerant, and as a fungicide.
86. Methane, formula: CH₄, purity 99.999%, Application: Used as standard gas, calibration gas,
online instrument standard gas. It is used as fuel and in gas batteries in spacecraft.
87. Methanethiol, formula: CH₃SH, purity > 99.5%, Application: Used as standard gas, calibration
gas. It is used in organic synthesis. It is used as a jet fuel additive, a fungicide, and an
intermediate for methionine.
88. Methylamine, formula: CH₃NH₂, purity > 99%, Application: Used in vulcanization accelerators,
pharmaceuticals, dyes, and explosives. It is used as a solvent, in organic synthesis, and in the
production of acetate rayon.
89. Methanol, formula: CH₃OH, purity > 99.9%, Application: Used as standard gas. When mixed
with air, it is used as calibration gas. It is used in the preparation of formaldehyde and pesticides.
It is used as an extractant for organic substances and as an alcohol denaturant.
90. Dimethylamine, formula: (CH₃)₂NH, purity > 99%, Application: Used as an antioxidant. It is
used as a flotation agent, a gasoline stabilizer, a rubber accelerator, etc. in solutions.
91. Dimethyl Ether, formula: (CH₃)₂O, purity > 99.9%, Application: In the chemical industry, it is
used in the preparation of synthetic rubber and methyl sulfide. It is used as a methylating agent,
an extractant, a solvent, and also as a refrigerant.
92. Acetylene, formula: C₂H₂, purity > 99.9%, Application: Used as standard gas, calibration gas.
It is an intermediate in the chemical industry, used for the preparation of ethylene, acetaldehyde,
vinyl acetate, vinyl chloride, vinyl ether, etc. It is used in atomic absorption spectroscopy.
93. Ethylene, formula: C₂H₄, purity > 99.99%, Application: Used as online instrument standard gas,
standard gas, calibration gas. It is an important raw material in chemical industry synthesis, an
intermediate for plastic production, and a raw material for the production of ethanol, acetic acid,
ethylene oxide, vinyl chloride, ethylbenzene, etc. It is also used in welding and cutting, as a
refrigerant, and as an accelerator for the growth of certain fruits and vegetables.
94. Ethylene Oxide, formula: C₂H₄O, purity 99.9%, Application: Used as standard gas, calibration
gas, medical gas. When mixed with CO₂, R11, R21, it is used as a disinfectant for cultural relic
preservation, leather disinfection, and fabric cleaning. In the chemical industry, it is used as an
intermediate for the production of liquid or solid polyethylene glycol and ethanolamines.
95. Bromoethylene, formula: C₂H₃Br, purity > 99.9%, Application: Used as an intermediate in
organic synthesis. It is used to prepare plastics by polymerization and copolymerization
methods.
96. Ethylamine, formula: CH₃CH₂NH₂, purity > 99%, Application: The aqueous solution contains
70% ethylamine. It is used as an intermediate in chemical industry preparation, such as for
colorants, electroplating baths, vulcanization accelerators, etc. It is also used in pharmaceuticals,
surfactants, and extractants.
97. Tetrafluoroethylene, formula: C₂F₄, purity > 99%, Application: It is an important monomer in
plastic production, such as for Teflon.
98. Acetaldehyde, formula: CH₃CHO, purity > 99.9%, Application: Used as calibration gas. It is
used in the preparation of acetic acid, acetic anhydride, ethyl acetate, n - butanol, and synthetic
resins.
99. Dimethyldisulfide, formula: CH₃S₂CH₃, purity > 99.9%, Application: Used as calibration gas
and solvent.
100. Dimethyl Sulfide, formula: CH₃SCH₃, purity > 99.9%, Application: Used as calibration gas
and solvent.
101. Ethanol, formula: C₂H₅OH, purity > 99.9%, Application: Used as calibration gas. It is used as
a solvent and in the preparation of dyes, coatings, pharmaceuticals, and synthetic rubbers.
102. Acetyl Chloride, formula: CH₃COCl, purity 99.99%, Application: Used as an acetylating
agent and a chemical reagent.
103. 1 - Hydroxyethylidene - 1,1 - bisphosphonic Acid (HEDPA), formula: C₂H₈P₂O₇, purity >
99.99%, Application: Used in special washing, textile bleaching and separation agents,
abrasives, and environmental sanitation. It is used as an anti - corrosion agent in oil and gas
fields.
104. Cyclopropane, formula: (CH₂)₃, purity > 99%, Application: Used in organic synthesis. It is
used as an anesthetic in medicine.
105. Methylacetylene, formula: C₃H₄, purity > 99%, Application: Used as online instrument
standard gas, calibration gas. It is used for the preparation of acetone and as a synthetic
intermediate in the chemical industry.
106. Hexafluoroacetone, formula: CF₃COCF₃, purity > 99.9%, Application: It is a highly reactive
gas. It often reacts with aliphatic ketones, and different products can be prepared from these
ketones, such as stable liquids, solvents, cements, monomers, copolymers, as well as
agricultural and pharmaceutical products.
107. Trimethylamine, formula: (CH₃)₃N, purity > 99%, Application: Used as standard gas. A 25%
solution of trimethylamine can be used for anti - histamine treatment. It is used as an
intermediate in the chemical industry to produce surfactants such as pesticides, wetting agents,
foaming agents, and synthetic resins.
108. Propylene, formula: C₃H₆, purity > 99.9%, Application: Used as standard gas, calibration gas,
online instrument standard gas. In the chemical industry, it is used for the preparation of
isopropanol, propylene oxide, oxy - alcohol classes, carbon tetrachloride, and polypropylene.
109. Allene, formula: C₃H₄, purity 99%, Application: Used as online instrument standard gas. It is
used as an intermediate in organic synthesis.
110. Propylene Oxide (1,2 - Epoxypropane), formula: C₃H₆O, purity > 99.9%, Application: Used
in the preparation of propylene glycol and foam plastics. It is also a solvent for cellulose acetate,
cellulose nitrate, and resins.
111. Methyl Vinyl Ether, formula: CH₃OCH=CH₂, purity > 99.5%, Application: Used as standard
gas. It is used as an intermediate in organic synthesis and as a raw material for the production
of plastics and synthetic resins and their copolymers.
112. Hexafluoropropylene, formula: C₃F₆, purity > 99.9%, Application: Used as an intermediate in
organic synthesis.
113. Propionyl Chloride, formula: CH₃CH₂COCl, purity > 99.9%, Application: Used in the
preparation of hydrochloric acid and propionic acid. It is used as an oxidant.
114. n - Butane, formula: C₄H₁₀, purity > 99.99%, Application: Used as standard gas, calibration
gas. It is used as fuel, mainly mixed with isobutane commercially. In the chemical industry, it
is used as an intermediate for the preparation of ethylene, propylene, butene, etc. It is used as
an aerosol propellant, filled into thermometer bulbs as a standard vapor - pressure - type pressure
gauge, and mixed with helium as an ionization particle counter.
115. Isobutane, formula: i - C₄H₁₀, purity > 99.99%, Application: Used as standard gas, calibration
gas. The usage is the same as that of (114).
116. Ethylacetylene, formula: C₄H₆, purity > 99%, Application: Used as standard gas, calibration
gas. It is used as a synthetic intermediate in the chemical industry.
117. Cyclobutane, formula: (CH₂)₄, purity > 99%, Application: Used as a liquid solvent, or can be
mixed with other solvents. It can also be used as a synthetic intermediate.
118. 1 - Butene, formula: C₄H₈, purity > 99.9%, Application: Used as standard gas, calibration gas.
It is used as an intermediate for the preparation of organic compounds and can be catalytically
dehydrogenated to produce butadiene.
119. cis - 2 - Butene, formula: C₄H₈, purity > 99%, Application: Used as standard gas, calibration
gas. It is used as an intermediate for the preparation of organic compounds. It can be
catalytically dehydrogenated to produce butadiene and acid - sulfate, and can react with water
to produce 2 - butanol. It can also be used as a solvent.
120. trans - 2 - Butene, formula: C₄H₈, purity > 99%, Application: Used as standard gas, calibration
gas. The usage is the same as that of (119).
121. cis - and trans - 2 - Butene, formula: C₄H₈, purity > 99%, Application: Used as calibration gas.
The usage is the same as that of (119).
122. 1,3 - Butadiene, formula: C₄H₆, purity > 99%, Application: Used as calibration gas. It is used
to produce synthetic rubbers, plastics, and resins by polymerization and copolymerization
methods, and is used in the production of nylon - 66. It is also a component of rocket fuel.
123. Isobutylene, formula: i - C₄H₈, purity > 99.9%, Application: Used as calibration gas and for
organic intermediates. It can be oxidized to produce acetone and formic acid, and can be
catalytically converted to diisobutylene, etc. in the liquid or gas phase. It can also be used to
prepare synthetic rubber, which has high acid and alkali resistance and is a good insulator.
124. Octafluoro - 2 - butene, formula: C₄F₈ (perfluorobutene), purity > 99.5%, Application: Used
as an intermediate in organic synthesis.
125. Diethylmethylamine, formula: (CH₃)₂NC₂H₅, purity 99.99%, Application: Reacts violently
upon contact with oxidants. When mixed with carbon dioxide and in the presence of mercury,
it can cause an explosive reaction.
126. n - Pentane, formula: C₅H₁₂, purity > 99%, Application: Used as standard gas and calibration
gas. It is used as a solvent and a synthetic intermediate.
127. Isopentane, formula: i - C₅H₁₂, purity > 99%, Application: Used as calibration gas. The usage
is the same as that of (126).
128. 2,2 - Dimethylpropane, formula: C₅H₁₂ (neopentane), purity > 99.9%, Application: It is a raw
material for the production of isobutylene and is used in the production of synthetic butene
rubber.
129. 3 - Methyl - 1 - butene, formula: C₅H₁₀ (methylbutene), purity > 99.95%, Application: Used
as an intermediate in organic synthesis. It is used to increase the octane number of fuels and in
the polymerization of plastics.
130. Pivaloyl Chloride, formula: (CH₃)₃CCOCl, purity > 99.99%, Application: It can be used to
prepare hydrogen chloride and pivalic acid. It can react with strong oxidants.
131. Benzene, formula: C₆H₆, purity > 99.999%, Application: Used as standard gas, calibration gas,
zero - point gas. It is a raw material for dyes, plastics, synthetic rubbers, synthetic resins,
synthetic fibers, synthetic drugs, and pesticides.
132. Hexane, formula: C₆H₁₄, purity > 99.9%, Application: Used as standard gas and calibration
gas. It is used as a solvent.
133. Triethylaluminum Trichloride, formula: C₆H₁₅Al₂Cl₃, purity > 99.99%, Application: Used for
synthetic intermediates. It is a catalyst for the polymerization of alkenes and the polymerization
of aromatic hydrocarbon derivatives.
134. Cyclohexane, formula: C₆H₁₂, purity > 99.99%, Application: Used as standard gas. It is used
to prepare cyclohexanol and cyclohexanone, for the synthesis of nylon - 6. It is widely used as
a solvent in the paint industry and is also an excellent solvent for resins, fats, paraffins, and oils.
135. Adipoyl Chloride, formula: ClOC(CH₂)₄COCl, purity > 99.99%, Application: Used to prepare
hydrogen chloride and adipic acid.
136. Toluene, formula: C₇H₈, purity > 99.99%, Application: Used as zero - point gas and calibration
gas. It is used in the manufacture of saccharin, dyes, drugs, and explosives. It is also used as a
solvent.
137. Styrene, formula: C₈H₈, purity > 99.9%, Application: Used as calibration gas. It is used in the
production of resins, plastics, synthetic rubbers, etc.
138. 2 - Ethylhexanoyl Chloride, formula: C₈H₁₅OCl, purity > 99.9%, Application: It can be used
to prepare hydrogen chloride and 2 - ethylhexanoic acid.
139. Octanoyl Chloride, formula: CH₃(CH₂)₆COCl, purity > 99.9%, Application: It is an oxidant.
It can be used to prepare hydrochloric acid and octanoic acid.
140. Aminoimidazolone, formula: C₉H₁₅N₃O₃, purity > 99.9%, Application: Used as a reducing
agent.
141. Nonanoyl Chloride, formula: C₁₀H₁₉OCl, purity > 99.9%, Application: Used to prepare
hydrochloric acid and nonanoic acid.
142. Neodecanoyl Chloride, formula: C₁₀H₁₉OCl, purity > 99.9%, Application: Used to prepare
hydrochloric acid and neodecanoic acid.
143. Triisobutylaluminum, formula: C₁₂H₂₇Al (TIBA), purity > 99.99%, Application: Used for
synthetic intermediates. It is a catalyst for the polymerization of alkenes and dienes.
144. Dodecanoyl Chloride, formula: CH₃(CH₂)₁₀COCl, purity > 99.9%, Application: Used to
prepare hydrochloric acid and lauric acid.
145. Octadecanoyl Chloride, formula: CH₃(CH₂)₁₈COCl, purity > 99.9%, Application: Used to
prepare hydrochloric acid and stearic acid.
146. Phenolphthalein Yellow, formula: C₂₀H₁₄O₄, purity > 99.9%, Application: Medicinally used
as a laxative.
147. Air (or synthetic air, 21% O₂, 79% N₂), purity: Ultra - zero - grade air contains CnHm <
0.1ppm, zero - grade air contains CnHm < 0.2ppm, Application: Used as zero - point gas. Zero
- grade air is often used as an oxidant in the flame ionization detector of chromatographs and
the total carbon analyzer.
148. Para - hydrogen, formula: H₂, purity > 99.99%, Application: Used as a rocket propellant. It is
used in bubble chambers in the nuclear industry and in cryogenic liquids for cold - electron
engineering in the research of solid - state circuits.
149. Pure Water, formula: H₂O, purity > 99.9999%, Application: Used as standard gas and
calibration gas.
150. Neon, formula: Ne, purity > 99.999%, Application: Used as standard gas and special gas
mixtures. It is used to fill incandescent lamps, electron tubes, signal lamps, for plasma research,
in the starters of fluorescent lamps, spark chambers, Geiger - Müller tubes, lasers. It is also used
as a cryogenic coolant.
151. Krypton, formula: Kr, purity > 99.995%, Application: Used as standard gas, special gas
mixtures, and in the bulb and electronics industry.
152. Xenon, formula: Xe, purity > 99.995%, Application: Used as standard gas and special gas
mixtures. It is used in electric light sources, the electronics industry, and for filling thyratrons
and half - wave rectifier tubes.
153. Bromine, formula: Br₂, purity > 99.99%, Application: Used in the chemical industry to prepare
hydrogen bromide and other bromine compounds, as an oxidant, and as an experimental reagent.
It is also used in the dye and photography industries.
154. Ozone, formula: O₃, purity > 99.99%, Application: Used as medical gas, for the disinfection
of surgical equipment, the purification of human water and swimming pools, the treatment of
industrial waste, and the disinfection of dirt. It is used for the bleaching of textile fibers, pulp,
and sugars, the preparation of camphor, and the purification of mineral oils and their derivatives.
155. Cyanogen, formula: C₂N₂, purity > 99%, Application: Used for welding and cutting heat -
resistant metals. When mixed with oxidants, ozone, and fluorine, it is used as a rocket and
missile propellant. It is used as a fumigant in medicine and as a medium in many organic
syntheses.
156. Cyanogen Chloride, formula: ClCN, purity > 99%, Application: Used in organic synthesis.
When mixed with fumigation gases, it can be used as a heat source.
157. Hydrogen Fluoride, formula: HF, purity > 99.9%, Application: Used to prepare fluorides and
fluorine gas. It acts as a catalyst in isomerization, condensation, polymerization, drying,
hydrolysis reactions, etc. It also serves as a fluorinating agent in some organic or inorganic
reactions.
158. Nitrosyl Chloride, formula: NOCl, purity > 99%, Application: Used for the diazotization,
nitration, and chlorination of organic compounds. It is also used as a petroleum - ripening agent.
159. Perfluorodichlorine Oxide, formula: ClO₃F, purity > 99%, Application: Used to be mixed with
fluorohalogens to form a liquid oxidizer for rocket engines. It can also be used as a selective
fluorinating agent for homologous compounds.
160. Carbonyl Chloride (Phosgene), formula: COCl₂, purity > 99.9%, Application: Used in organic
synthesis such as for dyes, drugs, herbicides, pesticides, synthetic foams, resins, and
polymerization. It is also used as a chlorinating agent.
161. Sulfuryl Fluoride, formula: SOF₂, purity > 99.5%, Application: Used to prepare fluorocarbons.
It is an excellent insecticidal fumigant, used for the fumigation of containers, crop seeds, forest
tree seeds, the prevention and control of boring pests in warehouses, ancient buildings, garden
fruit trees, and termites, as well as the protection of cultural relics and archives. It is also used
as a catalyst.
162. Nickel Carbonyl, formula: Ni(CO)₄, purity > 99.95%, Application: Used to prepare high -
purity nickel. It can be used to make metal mirrors and very thin nickel foils. It is an effective
catalyst in carbonization reactions.
163. Iron Carbonyl, formula: Fe(CO)₅, purity > 99.95%, Application: Mainly used as a carrier for
iron and as an anti - knock agent in gasoline.
164. Phosphoric Acid, formula: H₃PO₄, purity > 99.99%, Application: Used as calibration gas. It is
used to produce phosphates, glycerol phosphate esters, ammonium phosphate fertilizers, and as
a chemical reagent.
165. Sodium Perxenate, formula: Na₄XeO₆ꞏ8H₂O, purity > 99.99%, Application: A strong oxidant
that can be used to determine the mercury content in water.
166. Carbon Monoxide, formula: CO, purity > 99.995%, Application: Used as standard gas,
calibration gas, and online instrument standard gas. When mixed with hydrogen and other gases,
it is used as fuel gas. It is used to recover nickel from ore sands containing iron, cobalt, and
copper. It can also be used to prepare acids, ethers, and alcohol chemicals.
167. Sulfur Dioxide, formula: SO₂, purity > 99.99%, Application: Used as standard gas, calibration
gas, and online instrument standard gas. It is used for the preservation of beer, wine, and meat,
the preparation of sulfides and oxysulfides, as a bleaching agent for oils and foods, the
preparation of sulfite pulp, and as a coolant in the ice - making industry.
168. Nitrogen Dioxide (NO₂(N₂O₄)), purity > 99.9%, Application: Used as standard gas. It is used
as a catalyst for some oxidation reactions. It is used to prevent polymerization during the
distillation of acrylate salts, and as a nitrating agent, oxidant, rocket fuel, and flour bleaching
agent for organic compounds.
169. Oxygen Difluoride, formula: OF₂, purity > 99.5%, Application: Used as an oxidant. It is a
component of high - energy rocket propellant systems.
170. Dinitrogen Trioxide, formula: N₂O₃, purity > 99.5%, Application: It combines with alkalis to
form soda nitrites. It is used as an oxidant in special fuel systems and for the identification of
terpenes.
171. Xenon Trioxide, formula: XeO₃, purity > 99.99%, Application: Used to determine the content
of oxidizing solutions through redox substitution (Xe6→Xe0).
172. Sulfur Trioxide, formula: SO₃, purity > 99.99%, Application: Used in the chemical industry
to prepare sulfuric acid and fuming sulfuric acid. It is a sulfonating agent and is also used in the
dye industry.
173. Chlorine Trifluoride, formula: ClF₃, purity > 99.5%, Application: Used as a rocket and missile
propellant. When it comes into contact with fuel, it can immediately start the reaction (due to
its spontaneous reactivity). It is also used as an oil - well pipeline cutter, and can cut pipes up
to 2 kilometers deep.
174. Bromine Pentafluoride, formula: BrF₅, purity > 99.5%, Application: Used as a fluorinating
agent and an electrolytic solvent. It is also used as a rocket and missile propellant.
175. Tetrafluorohydrazine, formula: N₂F₄, purity > 99.9%, Application: A strong oxidant that can
be used to prepare nitrogen trifluoride.
176. Xenon Tetrafluoride, formula: XeF₄, purity > 99.9%, Application: It can be used to prepare
perxenate compounds and xenon trioxide solutions.
177. Bromine Pentafluoride, formula: BrF₅, purity > 99%, Application: Used as a fluorinating agent.
It is also used as a rocket and missile propellant.
178. Chlorine Pentafluoride, formula: ClF₅, purity > 99%, Application: A strong oxidant with less
corrosiveness than chlorine trifluoride. It can be used to prepare organic and inorganic fluorides
and can be used as a combustion - supporting agent for space propulsion devices.
179. Iodine Pentafluoride, formula: IF₅, purity > 99%, Application: Used as a fluorinating agent
and a combustion agent.
180. Molybdenum Hexafluoride, formula: MoF₆, purity > 99.9%, Application: A strong
fluorinating agent, also used as a carrier for molybdenum.
181. Tellurium Hexafluoride, formula: TeF₆, purity > 99.9%, Application: Used as a fluorinating
agent and a carrier for tellurium.
182. Trichlorofluoromethane (R11 - CCl₃F), purity > 99.95%, Application: Used in the
refrigeration industry, air - conditioning, as a solvent, for ice rinks, brine and seawater
installations, aerosol propellants, foaming agents, leak detection, and dry cleaning of textiles.
183. Dichlorodifluoromethane (R12 - CCl₂F₂), purity > 99.9%, Application: Used as standard gas
and calibration gas. It is used in low - temperature air - conditioning, food storage, the
refrigeration industry, aerosol propellants, leak detection, expansion agents, and gas - phase
insulation materials.
184. Bromochlorodifluoromethane (R12B1 - CBrClF₂), purity > 99.9%, Application: Used in the
production of petroleum, acetone, and carbon disulfide. It is used as a fire - extinguishing agent
for electrical fires.
185. Dibromodifluoromethane (R12B2 - CBr₂F₂), purity > 99.9%, Application: Used for rapid
polymerization. It is used as a fire - extinguishing agent.
186. Chlorodifluoromethane (R21 - CHCl₂F), purity > 99.9%, Application: Used for air -
conditioning in hot climates, as a refrigerant, a solvent, an aerosol propellant, and a chemical
medium.
187. Chlorodifluoromethane (R22 - CHClF₂), purity > 99.9%, Application: Used for cooling and
air - conditioning. It can be used as an aerosol propellant in special low - temperature spray
situations. It is used in the production of fluoropolymers and for leak detection.
188. Difluoromethane (R32 - CH₂F₂), purity > 99%, Application: Used as a refrigerant. When
mixed with chloropentafluoroethane (R115), it forms an azeotropic mixture refrigerant.
189. Chloromethane (R40 - CH₃Cl), purity > 99.5%, Application: Used as a refrigerant, for local
anesthesia treatment. It is used as a propellant gas in the aerosol industry, as a methylating agent
in organic synthesis, and as a solvent or extractant.
190. Bromomethane (R40B1 - CH₃Br), purity > 99.9%, Application: Used as a methylating agent
in organic synthesis (for colorants). It is used as a low - temperature solvent and refrigerant, and
for the fumigation of soil and seeds.
191. Fluoromethane (R41 - CH₃F), purity > 99.9%, Application: Used as a non - flammable aerosol
propellant in mixtures.
192. 1,1,2 - Trichlorotrifluoroethane (R113 - C₂Cl₂F₃, commonly known as TTE), purity > 99.9%,
Application: Used as a refrigerant and heat - transfer medium. It is used as an intermediate for
the preparation of chlorotrifluoroethylene (R1113).
193. 1,2 - Dichlorotetrafluoroethane (R114 - C₂Cl₂F₄), purity > 99%, Application: Used for
refrigeration, cooling, and air - conditioning. When mixed with dichlorodifluoromethane (R12)
alone, it is used as a cosmetic aerosol propellant.
194. 1,2 - Dibromotetrafluoroethane (R114B2 - C₂Br₂F₄), purity > 99.5%, Application: Used as a
solvent and fire - extinguishing agent. It is used as an aerosol propellant when mixed with other
fluorocarbons.
195. Chloropentafluoroethane (R115 - C₂ClF₅), purity > 99.9%, Application: Used as a refrigerant
and aerosol propellant.
196. Chlorodifluoroethane (R142B - C₂H₃ClF₂), purity > 99%, Application: Used as a refrigerant
and solvent. It is used as an aerosol propellant when mixed with non - flammable halocarbons.
197. Trifluoroethane (R143 - C₂H₃F₃), purity > 99.9%, Application: Used as a refrigerant.
198. 1,1 - Difluoroethane (R152A - C₂H₄F₂), purity > 99%, Application: Used as a refrigerant,
aerosol propellant, and as an intermediate in organic synthesis.
199. Chloroethane (R160 - C₂H₃Cl), purity > 99.9%, Application: Used for local anesthesia in
medical treatment, especially in surgical and dermatological spray applications. It is used as an
ethylating agent, refrigerant, solvent, and in the production of pesticides in the dye industry.
200. Fluoroethane (R161 - C₂ H ₅ F), purity > 99.9%, Application: Used for the synthesis of
intermediate media.
201. Azeotropic mixture of R - 12 and R152A (R500 - CCl₂F₂/C₂H₄ F₂), purity > 99.9%,
Application: Used as a refrigerant and for air - conditioning.
202. Azeotropic mixture of R - 22 and R115 (R502 - CHClF₂/C₂H₄F₂), purity > 99.9%, Application:
Used as a refrigerant, for air - conditioning, and for spraying.
203. Azeotropic mixture of R - 23 and R13 (R503 - CClF₃/CHF₃), purity > 99.9%, Application:
Used as a refrigerant and for air - conditioning.
204. Perfluorobutane (R601 - C₄F₁₀), purity > 99%, Application: Used as an insulating gas.
205. Chlorotrifluoroethylene (R1113 - C ₂ ClF ₃ ), purity > 99%, Application: Used for the
preparation of polymerization agents for greases, oils, waxes, and plastics. It is the monomer of
polychlorotrifluoroethylene.
206. Bromotrifluoroethylene (R113B1 - C ₂ BrF ₃ ), purity > 99%, Application: Used in
polymerization reactions and as a chemical intermediate.
207. Difluorochloroethylene (R1122 - C ₂ HClF ₂ ), purity > 99.9%, Application: Used as an
intermediate in chemical synthesis.
208. 1,1 - Difluoroethylene (R1132A - C₂H₂F₂), purity > 99%, Application: It is an important
monomer used in the production of plastics and elastomers.
209. Vinyl Chloride (R1140 - C₂H₃Cl), purity > 99.9%, Application: Used as a standard gas. It is
used as a polymerization agent and an intermediate in organic synthesis.
210. Vinyl Fluoride (R1140 - C₂H₃F), purity > 99.9%, Application: Used as a polymerization agent
and an intermediate in organic synthesis.
211. Helium - 3 (³He), purity > 99.99%, Application: Used to fill counting tubes. It is used as an
ultra - low - temperature cold source for dilution refrigerators, which can reach 4.5×10⁻³K.
212. Helium - 4 (⁴He), purity > 99.99%, Application: It can be used as a pressure - conveying gas
for low - temperature rocket fuels in space applications, heavy water in nuclear reactors, and all
normal - and low - temperature liquids.
213. Deuterium (D₂), purity > 99.95%, Application: In nuclear industry research, it is used as a
projectile in deuteron accelerators. When emitting γ - ray energy, it serves as a neutron source.
It can be used as a tracer in the study of chemical reactions, including hydrogen - containing
compounds. It is used for the production of heavy water (D₂O).
214. Tritium (T₂), purity > 99.95%, Application: Used as a standard gas, with a control of 1000
microcuries per liter. It has high reactivity. When mixed with neon and argon as a carrier gas, it
can be used to detect trace amounts of nitrogen and other rare gases.
215. Oxygen - 18 (¹⁸O₂), purity > 99%, Application: It can be used to prepare H₂¹⁸O, D₂¹⁸O, and
S¹⁸O₂.
216. Nitrogen - 15 (¹⁵N₂), purity > 99%, Application: It can be used to prepare ¹⁵NH₃, ¹⁶NO, ¹
⁵NO, etc.
217. Argon - 36 (³⁶Ar), purity > 99.99%, Application: Used for metrological values.
218. Argon - 40 (⁴⁰Ar), purity > 99.99%, Application: Used for metrological values.
219. Neon - 20 (²⁰Ne), purity > 99.99%, Application: Used for metrological values.
220. Neon - 22 (²²Ne), purity > 99.99%, Application: Used for metrological values.
221. Krypton - 85 (⁸⁵Kr), purity > 99.99%, Application: Standard gas, with a control of 10
microcuries per liter, used to fill light bulbs.
222. Krypton - 86 (⁸⁶Kr), purity > 99.9%, Application: Used as a standard gas.
223. Xenon - 133 (¹³³Xe), purity > 99.9%, Application: Used to fill light bulbs.
224. Carbon - 13 (¹³C), purity > 99%, Application: It can be used to prepare ¹³CO₂, ¹³C₆H₈, ¹
³CO, ¹³COS, ¹³C₂H₄, etc.
225. Carbon - 14 (¹⁴C), purity > 99%, Application: Used as a standard gas, with a control of 100
microcuries per liter.
226. Carbon - 18 (¹⁸C), purity > 99%, Application: It can be used to prepare C¹⁸O₂ and C¹⁸O.
227. Sulfur - 35 (³⁵S), purity > 99%, Application: Used as a standard gas, with a control of 100
microcuries per liter.
228. Trichloromethane (CHCl₃), purity > 99.9%, Application: Used in plasma dry etching.
229. Trichloroethane (C₂HCl₃), purity > 99.9%, Application: Used in thermal oxidation.
230. Dimethyldichlorosilane ((CH₃)₂SiHCl₂), purity > 96%, Application: Used in epitaxy and
chemical vapor deposition.
231. Dimethylchlorosilane ((CH ₃ ) ₂ SiHCl), purity > 96%, Application: Used in epitaxy and
chemical vapor deposition.
232. Trimethylchlorosilane ((CH₃)₃SiCl), purity > 95%, Application: Used in epitaxy and chemical
vapor deposition.
233. Dichlorotetrafluoroethane (C₂Cl₄F₂), purity > 99.9%, Application: Used in plasma dry etching.
234. Hexafluorosilicon (SiF₆), purity > 99.9%, Application: Used in plasma dry etching.
235. Octafluoromethane (CF₄, note: CF₈ might be a mistake, it should probably be CF₄), purity >
99.9%, Application: Used in plasma dry etching.
236. Isodecafluorobutane (i - C₄F₁₀), purity > 99.9%, Application: Used in plasma dry etching.
237. Dodecafluoroethane (C₂F₁₂), purity > 99.9%, Application: Used in plasma dry etching.
238. Vinyl Methyl Ether (C₃H₄O, note: C₃H₃O might be a mistake, it should probably be C₃H
₄O), purity > 99.5%, Application: Information not provided in the original text about its specific
application.
239. Vinylacetylene (CH₂CHC≡CH), purity > 50%, Application: No more specific application
information is available (not detailed in the document).
240. Dimethylcadmium ((CH₃)₂Cd), purity > 99.999%, Application: Electronic gas, used in
MOCVD.
241. Diethylcadmium ((C₂H₅)₂Cd), purity > 99.999%, Application: Electronic gas, used in
MOCVD.
242. Tetramethyltin ((CH₃)₄Sn), purity > 99.999%, Application: Electronic gas, used in
MOCVD.
243. Tetraethyltin ((C₂H₅)₄Sn, there was an error as (C₂H₅)Sn in the original document), purity >
99.999%, Application: Electronic gas, used in MOCVD.
244. Trimethylarsine ((CH₃)₃As), purity > 99.999%, Application: Electronic gas, used in
MOCVD.
245. Triethylarsine ((C₂H₅)₃As), purity > 99.999%, Application: Electronic gas, used in
MOCVD.
246. Triethylantimony ((C₂H₅)₃Sb), purity > 99.999%, Application: Electronic gas, used in
MOCVD.
247. Diethylindium ((C₂H₅)₂In), purity > 99.9999%, Application: Electronic gas, used in
MOCVD.
248. Dimethylindium ((CH₃)₂In), purity > 99.9999%, Application: Electronic gas, used in
MOCVD.
249. Diethylmagnesium ((C₂H₅)₂Mg), purity > 99.999%, Application: Electronic gas, used in
MOCVD.
250. Dimethylmercury ((CH₃)₂Hg), purity > 99.999%, Application: Electronic gas, used in
MOCVD.
251. Diethylmercury ((C₂H₅)₂Hg), purity > 99.999%, Application: Electronic gas, used in
MOCVD.
252. Trimethylphosphine ((CH₃)₃P), purity > 99.999%, Application: Electronic gas, used in
MOCVD.
253. Triethylphosphine ((C₂H₅)₃P), purity > 99.999%, Application: Electronic gas, used in
MOCVD.
254. Triisobutylaluminum ((i - C₄H₉)₃Al), purity > 99.9999%, Application: Electronic gas, used
in MOCVD.
255. Trisilane (Si₃H₈), purity > 99%, Application: Electronic gas, used in CVD.
256. Aluminum Trichloride (AlCl₃), purity > 99.999%, Application: Electronic gas, used for
epitaxy.
257. Tantalum Pentafluoride (TaF₅), purity > 99.9%, Application: Electronic gas, used for ion
implantation.
258. Thallium Pentafluoride (TlF₅), purity > 99.9%, Application: Electronic gas, used for ion
implantation.
259. Vinyl Chloride (C₂H₃Cl), purity 99.9%, Application: Calibration gas; used as a refrigerant.
260. Vinyl Fluoride (C₂H₃F), purity > 99.9%, Application: Calibration gas; used for the
production of copolymers of polyethylene resin and other monomers.
